Atomic-Resolution Imaging of ZnSSe(110) Surface with Ultrahigh-Vacuum Atomic Force Microscope (UHV-AFM)

Abstract
Atomic-resolution imaging of a ZnSSe(110) surface grown by molecular beam epitaxy on a GaAs substrate was demonstrated for the first time with an ultrahigh-vacuum atomic force microscope (UHV-AFM). A rectangular lattice with spacing of 5.6±0.6 Å and 4.0±0.4 Å is resolved. This result suggests that the UHV-AFM has potential to image the group II-VI compound semiconductor surfaces having dangling bonds, on an atomic scale.