The sputtering efficiency of polycrystalline solids
- 1 January 1970
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 3 (1) , 51-59
- https://doi.org/10.1080/00337577008235616
Abstract
The sputtering efficiency (i.e. the ratio of reflected to incident energy) has been measured for graphite, aluminum, silicon, copper, silver, tantalum, and lead with 30–75 keV He+, C+, Ne+, Ar+, Cu + , Kr + , Xe+, and Pb+ ions at perpendicular incidence. The measured efficiencies range from 0.5 per cent (He+ → Si) to 7 per cent (Ne+ → Pb). In accordance with theory, the results for heavier projectiles may be represented as a function of the ratio of target-to-projectile masses M 2 /M 1 only. The results are either energy independent or they decrease with increasing energy, the energy dependence being more pronounced the lighter the targets and projectile.Keywords
This publication has 12 references indexed in Scilit:
- Festkörperzerstäubung durch IonenbeschußPublished by Springer Nature ,2007
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- THE ENERGY EFFICIENCY OF LEAD SELF-SPUTTERINGApplied Physics Letters, 1968
- II. The energy spectrum of ejected atoms during the high energy sputtering of goldPhilosophical Magazine, 1968
- Sputtering efficiency of amorphous substancesCanadian Journal of Physics, 1968
- Fast Ion Scattering against Metal SurfacesPublished by Elsevier ,1966
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961
- Sputtering of copper by bombardment with ions of 5–25 keVPhysica, 1960
- High-Energy SputteringJournal of Applied Physics, 1960