Initial study on copper CMP slurry chemistries
- 1 October 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 266 (2) , 238-244
- https://doi.org/10.1016/0040-6090(95)06649-7
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition Precursors on Silica: IV . Interaction of (1,1,1,5,5,5‐hexafluoroacetylacetonato)(2‐butyne)copper(I), and (1,1,1,5,5,5,‐hexafluoroacetylacetonato)(vinyltrimethylsilane)copper(I), with Passivated Silica Surfaces and Comparison to Selective CVD of CuJournal of the Electrochemical Society, 1994
- Selective deposition of copper by chemical vapor deposition using Cu(HFA)2Journal of Vacuum Science & Technology A, 1994
- Selective and blanket copper chemical vapor deposition for ultra-large-scale integrationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Copper Film Growth by Chemical Vapor Deposition: Electrical and Optical Measurements in Real Time, and Studies of MorphologyJournal of the Electrochemical Society, 1993
- Low-temperature copper etching via reactions with Cl2 and PEt3 under ultrahigh vacuum conditionsJournal of Applied Physics, 1993
- Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modificationApplied Physics Letters, 1992
- Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip InterconnectsJournal of the Electrochemical Society, 1991
- Reactive ion etching of copper in SiCl4-based plasmasApplied Physics Letters, 1991
- Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit InterconnectionsJournal of the Electrochemical Society, 1991
- Reactive Ion Etching of Copper FilmsJournal of the Electrochemical Society, 1983