Surface diffusion kinetics of GaAs and AlAs metalorganic vapor-phase epitaxy
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 246-250
- https://doi.org/10.1016/s0022-0248(96)00522-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Erratum: ‘‘Surface-diffusion and step-bunching mechanisms of metalorganic vapor-phase epitaxy studied by high-vacuum scanning tunneling microscopy’’ [J. Appl. Phys. 78, 3026 (1995)]Journal of Applied Physics, 1996
- Surface diffusion of AlAs on GaAs in metalorganic vapor phase epitaxy studied by high-vacuum scanning tunneling microscopyApplied Physics Letters, 1995
- Saturation and scaling of epitaxial island densitiesPhysical Review Letters, 1994
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicinal Substrate Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Time-resolved x-ray scattering studies of layer-by-layer epitaxial growthPhysical Review Letters, 1992
- Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1992
- In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1992
- Step-density dependence of growth rate on vicinal surface of MOCVDJournal of Crystal Growth, 1991
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Rate equation approaches to thin film nucleation kineticsPhilosophical Magazine, 1973