X-Ray Characterisation of Boron Delta Layers in Si and SiGe
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Structural and electrical properties of B delta layers in SiSemiconductor Science and Technology, 1991
- Elemental boron doping behavior in silicon molecular beam epitaxyApplied Physics Letters, 1991
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- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)Japanese Journal of Applied Physics, 1983
- Determination of strain distributions from X-ray Bragg reflexion by silicon single crystalsActa Crystallographica Section A, 1977