Structural and electrical properties of B delta layers in Si
- 1 March 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (3) , 227-228
- https://doi.org/10.1088/0268-1242/6/3/015
Abstract
X-ray diffraction has been used to deduce the width and strain fields of an elemental boron delta layer in (100) Si grown by MBE. It is found to be 14 cm-2, one of the highest values reported to date. Cross-sectional TEM analysis confirms that it is a near-ideal delta layer, with no precipitation evident.Keywords
This publication has 9 references indexed in Scilit:
- X-ray diffraction characterization of Sb delta doping in SiJournal of Physics D: Applied Physics, 1990
- p-type delta-doped layers in silicon: Structural and electronic propertiesApplied Physics Letters, 1990
- Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detectorThin Solid Films, 1990
- P-type delta doping in silicon MBEThin Solid Films, 1990
- Electron transport in a-Si:H,Fa-Si,Ge:H,F superlatticesSuperlattices and Microstructures, 1989
- Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxyApplied Physics Letters, 1989
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- Ultrathin doping layers as a model for 2D systemsSurface Science, 1978
- Determination of strain distributions from X-ray Bragg reflexion by silicon single crystalsActa Crystallographica Section A, 1977