Kinetics of the chemical reaction between dichlorosilane and ammonia during silicon nitride film deposition
- 1 August 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 189 (2) , 275-282
- https://doi.org/10.1016/0040-6090(90)90456-n
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Mechanism of the chemical vapour deposition of Si3N4 films prepared from SiH2Cl2 and NH3 under kinetically controlled conditionsThin Solid Films, 1982
- Mechanism of the chemical vapour deposition of Si3N4 films from SiH2Cl2 and NH3 under diffusion-controlled conditionsThin Solid Films, 1982
- Mass Spectrometric Detection of Intermediates in Chemical Vapor Deposition of Si3 N 4Journal of the Electrochemical Society, 1977
- Influence of crystal structure on the luminescence of ions with s2 configurationJournal of Solid State Chemistry, 1977