Occupied electronic structure of Au and Ag on Ge(111)

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Abstract
The surfaces formed by the vapor deposition of Au and Ag on c(2×8)Ge(111) were probed with the technique of synchrotron-radiation angle-resolved photoelectron spectroscopy (ARPES), as well as low-energy electron diffraction and Auger-electron spectroscopy. Depositions were performed with the substrate at room and elevated temperatures (T≊300–350 °C) and both the valence and core states were sampled with ARPES. Extensive studies were made of the occupied electronic structure of the (√3 × √3 )R30° surfaces, which are formed by the deposition of small amounts of Au or Ag onto an elevated-temperature Ge(111) substrate. The results of these experiments indicate that the d states of the metal overlayer are atomiclike and that specific occupied electronic states can be associated with the (√3 × √3 )R30° surface structure. Investigation of the electronic structure of surfaces formed by deposition onto a room-temperature substrate indicates that a bulklike metallic valence-band structure is developing by coverages of 5 or more monolayers. These results and the subtle variations between the Au and Ag systems are discussed.