Studies of In0.53Ga0.47As/InP Superlattice Mixing and Conversion
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- InGaAs/InP superlattice mixing induced by Zn or Si diffusionApplied Physics Letters, 1988
- Disordering of Ga 0.47 In 0.53 As/InP multiple quantum well layers by sulphur diffusionElectronics Letters, 1988
- Disordering of InGaAs-InP quantum wells by Si implantationApplied Physics Letters, 1988
- Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal AnnealingJapanese Journal of Applied Physics, 1987
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985