The effect of grain boundary shunt currents on mis solar cell performance
- 1 January 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (1) , 21-35
- https://doi.org/10.1007/bf02654606
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effect of atomic hydrogen passivation on polycrystalline silicon epitaxial solar cellsApplied Physics Letters, 1981
- Current Transport in Doped Polycrystalline SiliconJapanese Journal of Applied Physics, 1980
- Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cellsIEEE Transactions on Electron Devices, 1980
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978