Ultra-cut: a simple technique for the fabrication of SOI substrates with ultra-thin (>5 nm) silicon films
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 145-146
- https://doi.org/10.1109/soi.1998.723153
Abstract
A simple technique for the fabrication of ultra-thin silicon-on-insulator (SOI) substrates is presented. The technique utilizes a combination of two established SOI fabrication procedures and provides a method that eliminates the disadvantages of both. The bond-and-etch-back technique utilizing a Si/sub x/Ge/sub 1-x/ etch stop has been combined with the thin film separation by hydrogen implantation approach for SOI substrate fabrication. Ultra-thin (<5 nm) Si SOI layers have been fabricated successfully and characterized by transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy.Keywords
This publication has 2 references indexed in Scilit:
- Silicon on insulator material technologyElectronics Letters, 1995
- Fabrication of Bond and Etch Back Silicon on Insulator Using SiGe-MBE and Selective Etching TechniquesMRS Proceedings, 1991