12-GHz-Band Low-Noise GaAs Monolithic Amplifiers
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (12) , 1083-1088
- https://doi.org/10.1109/TMTT.1983.1131666
Abstract
One- and two-stage 12-GHz-band low-noise GaAs monolithic amplifiers have been developed for use in direct broadcasting satellite (DBS) receivers. The one-stage amplifier provides a less than 2.5-dB noise figure with more than 9.5-dB associated gain in the 11.7-12.7-GHz band. In the same frequency band, the two-stage amplifier has a less tlhan 2.8-dB noise figure with more than 16-dB associated gain. A 0.5-µm gate closely spaced electrode FET with an ion-implanted active layer is employed in the amplifier in order to achieve a low-noise figure without reducing reproducibility. The chip size is 1 mm x 0.9 mm for the one-stage amplifier, and 1.5 mm x 0.9 mm for the two-stage amplifier.Keywords
This publication has 7 references indexed in Scilit:
- Monolithic Circuits for 12 GHz Direct Broadcasting Satellite ReceptionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ion-implanted E/D-type GaAs IC technologyElectronics Letters, 1981
- 20-GHz Band Monolithic GaAs FET Low-Noise AmplifierIEEE Transactions on Microwave Theory and Techniques, 1981
- Orientation effect on planar GaAs Schottky barrier field effect transistorsApplied Physics Letters, 1980
- Super low-noise GaAs MESFET's with a deep-recess structureIEEE Transactions on Electron Devices, 1980
- Simple method of measuring drift-mobility profiles in thin semiconductor filmsElectronics Letters, 1976
- Impedance Measurements of Microwave Lumped Elements from 1 to 12 GHzIEEE Transactions on Microwave Theory and Techniques, 1972