A combined socketed and non-socketed CDM test approach for eliminating real-world CDM failures
- 24 August 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Melt filaments in n+pn+ lateral bipolar ESD protection devicesJournal of Electrostatics, 1996
- Influence of tester, test method, and device type on CDM ESD testingIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1995
- A correlation study between different types of CDM testers and "real" manufacturing in-line leakage failuresIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1995
- Advanced CMOS protection device trigger mechanisms during CDMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Latent gate oxide defects caused by CDM-ESDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Integrated circuit metal in the charged device model: bootstrap heating, melt damage, and scaling lawsJournal of Electrostatics, 1993
- Mechanisms of charged-device electrostatic dischargesJournal of Electrostatics, 1992