Melt filaments in n+pn+ lateral bipolar ESD protection devices
- 1 October 1996
- journal article
- Published by Elsevier in Journal of Electrostatics
- Vol. 38 (1-2) , 113-129
- https://doi.org/10.1016/s0304-3886(96)00027-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- ESD failure modes: characteristics mechanisms, and process influencesIEEE Transactions on Electron Devices, 1992
- Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parametersIEEE Transactions on Electron Devices, 1991
- Thermal response of integrated circuit input devices to an electrostatic energy pulseIEEE Transactions on Electron Devices, 1987
- NMOS protection circuitryIEEE Transactions on Electron Devices, 1985
- Electrical Overstress Failure Modeling for Bipolar Semiconductor ComponentsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973