Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parameters
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (9) , 2161-2168
- https://doi.org/10.1109/16.83744
Abstract
A technique is presented to determine the effective process and design-related parameters from the high-current I-Vcharacteristics of NMOSTs, for use in the development of electrostatic discharge (ESD) protection circuits. Test structures from a fully salicided, LDD MOS process were characterized with a transmission line pulse generator to obtain the snapback voltages and the second-breakdown trigger currents (It2) Good correlations are shown between It2 and the human body model (HBM) ESD damage thresholds. It was seen that homogeneous current injection in the avalanching diffusions is imperative for good second breakdown behavior. A simplified thermal model, with second breakdown as the boundary condition for damage, was used in the extraction of the effective junction depth, depletion width, and transistor width under high-current conditions. Experimental data obtained for the power-to-failure as a function of the time-to-failure showed a good fit to the model. A possible extension of the technique for the use of DC characterization to monitor ESD behavior is presentedKeywords
This publication has 10 references indexed in Scilit:
- SiC power devices — Present status, applications and future perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- ESD phenomena in graded junction devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Thermal breakdown in GaAs MES diodesSolid-State Electronics, 1990
- Thermal failure in semiconductor devicesSolid-State Electronics, 1990
- ESD on CHMOS Devices - Equivalent Circuits, Physical Models and Failure Mechanisms8th Reliability Physics Symposium, 1985
- Electrical Overstress Failure Modeling for Bipolar Semiconductor ComponentsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
- Breakdown mechanism in short-channel MOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973
- Pulse Power Failure Modes in SemiconductorsIEEE Transactions on Nuclear Science, 1970
- Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse VoltagesIEEE Transactions on Nuclear Science, 1968