ESD phenomena in graded junction devices

This publication has 6 references indexed in Scilit:

• Hot-electron-induced degradation of conventional, minimum overlap, LDD and DDD N-channel MOSFETs
  IEEE Circuits and Devices Magazine, 1988
• Hot-electron reliability and ESD latent damage
  IEEE Transactions on Electron Devices, 1988
• Internal chip ESD phenomena beyond the protection circuit
  IEEE Transactions on Electron Devices, 1988
• The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors
  IEEE Transactions on Electron Devices, 1988
• NMOS protection circuitry
  IEEE Transactions on Electron Devices, 1985
• Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
  IEEE Journal of Solid-State Circuits, 1985