Nonalloyed ohmic contacts to n-Si using a strained Si0.50Ge0.50 buffer layer
- 16 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (7) , 911-913
- https://doi.org/10.1063/1.109842
Abstract
We have grown an 80‐Å‐thick strained Si0.50Ge0.50 layer on n‐Si by molecular‐beam epitaxy. The strained layer is used to lower the Schottky barrier height for making a nonalloyed shallow ohmic contact to the n‐Si. X‐ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core‐level binding energies of the strained and the relaxed Si0.50Ge0.50 and to determine their relative Fermi‐level positions. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W, or Pt as contact metals. In the case of Pt, a 500‐Å W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the metal/Si0.50Ge0.50/n‐Si contact extracted from the D‐type cross‐bridge Kelvin resistor was 3.5×10−5 Ω cm2.Keywords
This publication has 15 references indexed in Scilit:
- An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structuresJournal of Applied Physics, 1991
- Thermally stable, low-resistance NiInW ohmic contacts to n-type GaAsApplied Physics Letters, 1987
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Heterojunction Ohmic Contacts to Si Using Ge/Si n+/n+ StructuresMRS Proceedings, 1985
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- A study of Ge/GaAs interfaces grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967