Measurement of diffusion length gradients in hydrogen passivated silicon ribbon
- 15 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 414-416
- https://doi.org/10.1063/1.95596
Abstract
Hydrogen passivation of p-type Si ribbon was studied by means of diffusion length measurements using the surface photovoltage (SPV) method. The effect of gradients in diffusion length on the SPV measurements and the median depth sampled by this method were investigated by numerical solution of the appropriate diffusion equations. The SPV technique was found to give an average of the diffusion length depth distribution with a median sampling depth of 70 μm. Up to threefold increases in diffusion length were observed due to passivation. Diffusion length profiling measurements made by etching away the surface showed significant passivation occurring at a depth of 200 μm.Keywords
This publication has 7 references indexed in Scilit:
- Hydrogen passivation of dislocations in siliconApplied Physics Letters, 1984
- Hydrogen diffusion along passivated grain boundaries in silicon ribbonApplied Physics Letters, 1984
- Use of a Liquid Electrolyte Junction for the Measurement of Diffusion Length in Silicon RibbonJournal of the Electrochemical Society, 1984
- Material Processing with Broad-Beam Ion SourcesAnnual Review of Materials Science, 1983
- Hydrogen passivation of defects in silicon ribbon grown by the edge-defined film-fed growth processApplied Physics Letters, 1983
- Passivation of grain boundaries in siliconJournal of Vacuum Science and Technology, 1982
- Hydrogen passivation of defects in deformed siliconPhysica Status Solidi (a), 1981