Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon
- 1 January 1991
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Hydrogen bonding and diffusion in crystalline siliconPhysical Review B, 1989
- Embrittlement of materials: Si(H) as a model systemJournal of Nuclear Materials, 1989
- Dihydrogen complexes in siliconRadiation Effects and Defects in Solids, 1989
- Hydrogen passivation studies on Pd–n-type-Si diodesPhysical Review B, 1989
- Johnson, Herring, and Chadi replyPhysical Review Letters, 1987
- Reactive Ion Etching Damage to Shallow JunctionsMRS Proceedings, 1986
- Photoluminescence of Defects Produced by Reactive Ion Etching of SiliconMaterials Science Forum, 1986
- Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependencesJournal of Applied Physics, 1983
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980
- Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurementSolid-State Electronics, 1974