The formation of luminescence centers in silicon crystals after electron irradiation and ion implantation at 20 K
- 16 June 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 143 (2) , 261-269
- https://doi.org/10.1002/pssa.2211430209
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The optical properties of luminescence centres in siliconPhysics Reports, 1989
- Annealing Studies of Defects Pertinent to Radiation Damage in Si:BPhysica Status Solidi (a), 1987
- New photoluminescence defect spectra in silicon irradiated at 100 K: Observation of interstitial carbon?Solid State Communications, 1987
- Microscopic Identification of Optical Defects in Silicon by PhotoluminescenceMRS Proceedings, 1985
- Studies of defects introduced by electron irradiation at 4.2 °K in p-silicon by thermally stimulated capacitance techniqueJournal of Applied Physics, 1976
- Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °KJournal of Applied Physics, 1976
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited PaperIEEE Transactions on Nuclear Science, 1969
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963