Polarity of GaN
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Chemical polishing of bulk and epitaxial GaNJournal of Crystal Growth, 1997
- Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial FilmsMicroscopy and Microanalysis, 1997
- Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopyCrystal Research and Technology, 1997
- Polarity determination of GaN films by ion channeling and convergent beam electron diffractionApplied Physics Letters, 1996
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressureJournal of Electronic Materials, 1996
- Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layersApplied Physics Letters, 1996
- Structure of the 2H-Ain/6H-SiC InterfaceMRS Proceedings, 1996
- Understanding the Pyramidal Growth of GaNMRS Proceedings, 1995