Guiding principles for obtaining stabilized amorphous silicon at larger growth rates
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 90-94
- https://doi.org/10.1016/s0022-3093(99)00743-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Gas-phase diagnosis and high-rate growth of stable a-Si:HThin Solid Films, 1999
- Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVDThin Solid Films, 1999
- Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth ratesJournal of Vacuum Science & Technology A, 1998
- Contribution of short lifetime radicals to the growth of particles in SiH4 high frequency discharges and the effects of particles on deposited filmsJournal of Vacuum Science & Technology A, 1996
- On the primary process in the plasma-chemical and photochemical vapor deposition from silane. III. Mechanism of the radiative species Si*(1P ) formationThe Journal of Chemical Physics, 1989