Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide ()
- 31 July 2002
- journal article
- Published by Elsevier in Surface Science
- Vol. 513 (2) , 256-262
- https://doi.org/10.1016/s0039-6028(02)01819-8
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Composition control of InGaAsP in metalorganic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsineJournal of Crystal Growth, 1998
- A comparison of the reactions of phosphorus precursors on deposited GaP and InP filmsJournal of Crystal Growth, 1997
- On the nucleation and composition analysis of InAs1−xPx during vapour phase epitaxial growthJournal of Crystal Growth, 1996
- Non-linear As(P) incorporation in GaAs1−yPy on GaAs and InAs1−yPy on InPJournal of Crystal Growth, 1995
- A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxyJournal of Applied Physics, 1993
- GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor depositionJournal of Applied Physics, 1993
- Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molelcular beam epitaxyJournal of Crystal Growth, 1993
- Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrateApplied Physics Letters, 1992
- Solid composition of GaAs1-xPx grown by organometallic vapour phase epitaxyJournal of Crystal Growth, 1987
- Alloying mechanisms in MOVPE GaAs1-xPxJournal of Crystal Growth, 1983