On the nucleation and composition analysis of InAs1−xPx during vapour phase epitaxial growth
- 9 May 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 162 (3-4) , 113-120
- https://doi.org/10.1016/0022-0248(95)00897-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone methodJournal of Crystal Growth, 1992
- A thermodynamic approach for the vapour phase epitaxial growth of GaxIn1−xAs from A Ga-In-H-Cl-As systemJournal of Crystal Growth, 1990
- Epitaxial nucleation and growth kinetics of indium phosphide in an InPH3HClH2 systemThin Solid Films, 1988
- Epitaxial nucleation and growth kinetics of gallium arsenide in a chloride transport systemSemiconductor Science and Technology, 1987
- Vapor Growth of InAsxP1-xJapanese Journal of Applied Physics, 1974
- Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction ElectroluminescenceJournal of the Electrochemical Society, 1973
- Electron-Microprobe Characterization of Vapor-Grown InAs[sub 1−x]P[sub x] LayersJournal of the Electrochemical Society, 1973
- Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x LayersJournal of Applied Physics, 1972
- Deposition of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs and GaP SubstratesJournal of the Electrochemical Society, 1970
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969