Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method
- 1 September 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 123 (1-2) , 213-220
- https://doi.org/10.1016/0022-0248(92)90026-f
Abstract
No abstract availableKeywords
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