Growth of InGaAsP Quaternary by Chloride VPE
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12A) , L928-930
- https://doi.org/10.1143/jjap.23.l928
Abstract
We report on the first successful growth of InGaAsP quaternary alloy by chloride vapor phase epitaxy, which uses PCl3 and AsCl3 as sources of group V elements and In and Ga as metal sources. We found that the controllability and reproducibility of the alloy composition are excellent. InGaAsP quaternary alloy with an energy gap corresponding to the light energy of 1.3 µm has been grown with lattice mismatch lower than 2×10-4.Keywords
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