Electronic properties of theSbGaheteroantisite defect in GaAs:Sb

The electronic properties of the ${\mathrm{Sb}}_{\mathrm{Ga}}$ heteroantisite defect in epitaxial GaAs have been investigated using space-charge techniques. The energy-level structure of the defect is found to be consistent with that of a double donor with the (0/+) energy level located at ${\mathit{E}}_{\mathit{c}}$-0.5 eV and the (+/2+) energy level located at ${\mathit{E}}_{\mathit{c}}$-0.7 eV. The spectral distributions of the optical cross sections for three of the transitions have been measured in absolute numbers. A comparison with previously measured photo-EPR data on the ${\mathrm{Sb}}_{\mathrm{Ga}}^{+}$ defect shows that the energy levels studied here originate in the ${\mathrm{Sb}}_{\mathrm{Ga}}$ defect.