Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry
- 28 March 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (7) , 4181-4190
- https://doi.org/10.1063/1.1457535
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Microcrystalline silicon nucleation sites in the sub-surface of hydrogenated amorphous siliconSurface Science, 2002
- Real-time spectroscopic ellipsometry studies of the nucleation and grain growth processes in microcrystalline silicon thin filmsPhysical Review B, 2001
- Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopyJournal of Non-Crystalline Solids, 2000
- Surface reactions in very low temperature (<150°C) hydrogenated amorphous silicon deposition, and applications to thin film transistorsJournal of Non-Crystalline Solids, 2000
- Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor depositionJournal of Applied Physics, 1999
- Growth mechanism of microcrystalline silicon obtained from reactive plasmasThin Solid Films, 1999
- Influence of excitation frequency, temperature, and hydrogen dilution on the stability of plasma enhanced chemical vapor deposited a-Si:HJournal of Applied Physics, 1998
- Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometryApplied Physics Letters, 1998
- Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilutionJournal of Applied Physics, 1996
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989