Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in AlxGa1-xAs:Sn
- 1 May 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (5R)
- https://doi.org/10.1143/jjap.27.738
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- DXcenter: Crossover of deep and shallow states in Si-dopedAsPhysical Review B, 1986
- Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A reviewSolid-State Electronics, 1986
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1985
- A Simple Calculation of the DX Center Concentration Based on an L-Donor ModelJapanese Journal of Applied Physics, 1985
- Donor Levels in Si-Doped AlGaAs Grown by MBEJapanese Journal of Applied Physics, 1984
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient SpectroscopyJapanese Journal of Applied Physics, 1984
- A constrained regularization method for inverting data represented by linear algebraic or integral equationsComputer Physics Communications, 1982
- Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity inPhysical Review Letters, 1979
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977