A noise model for high electron mobility transistors

This publication has 26 references indexed in Scilit:

• Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
  Solid-State Electronics, 1994
• A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
  Solid-State Electronics, 1994
• Noise properties of AlGaAs/GaAs MODFET's
  IEEE Transactions on Electron Devices, 1993
• DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics
  IEEE Transactions on Electron Devices, 1990
• Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances
  IEEE Electron Device Letters, 1986
• The noise properties of high electron mobility transistors
  IEEE Transactions on Electron Devices, 1986
• Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)
  Journal of Vacuum Science & Technology B, 1984
• Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
  Published by Elsevier ,1975
• Noise characteristics of gallium arsenide field-effect transistors
  IEEE Transactions on Electron Devices, 1974
• Gate noise in field effect transistors at moderately high frequencies
  Proceedings of the IEEE, 1963