A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
- 31 January 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (1) , 51-54
- https://doi.org/10.1016/0038-1101(94)90103-1
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Noise properties of AlGaAs/GaAs MODFET'sIEEE Transactions on Electron Devices, 1993
- Approximate analytic current-voltage calculations for MODFETsIEEE Transactions on Electron Devices, 1990
- Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistorIEEE Transactions on Electron Devices, 1988
- Analytical models for AlGaAs/GaAs heterojunction quantum wellsSolid-State Electronics, 1987
- Charge control mechanism in MODFET's: A theoretical analysisIEEE Transactions on Electron Devices, 1986
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969