Electrical properties of R.F.-sputtered SiO2 films
- 1 March 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 125 (3-4) , 299-303
- https://doi.org/10.1016/0040-6090(85)90236-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Temperature and bias effects on the electrical properties of CdS thin films prepared by r.f. sputteringThin Solid Films, 1984
- Bipolaron and single-polaron contributions to a.c. conduction in r.f. sputtered SiO2 filmsPhilosophical Magazine Part B, 1982
- Deposition dependence of r.f.-sputtered CdS filmsThin Solid Films, 1982
- A.c. conduction in r.f. sputtered SiO2 filmsPhilosophical Magazine Part B, 1979
- Stoichiometry and atomic defects in rf-sputtered SiO2Journal of Applied Physics, 1979
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- High Quality RF‐Sputtered Silicon Dioxide LayersJournal of the Electrochemical Society, 1976
- Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiOX) FilmsJapanese Journal of Applied Physics, 1972
- The evaluation of thin film insulatorsThin Solid Films, 1968
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965