AlGaAs/GaAs quantum wire lasersfabricated by flow rate modulation epitaxy
- 15 April 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (8) , 639-640
- https://doi.org/10.1049/el:19990458
Abstract
AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (1e-1hh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained.Keywords
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