Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S) , 4550
- https://doi.org/10.1143/jjap.31.4550
Abstract
Film uniformity is the main problem when applying laser-recrystallised poly-Si films to thin film transistors (TFTs) in giant micro electronics. However, this has been dramatically improved by a new excimer laser annealing method in which the solidification process of molten Si is controlled by low-temperature (≦400°C) substrate heating during excimer laser annealing. Poly-Si TFT fabricated around the laser irradiation overlap region exhibited a high field effect mobility uniformity of within ±8%.Keywords
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