Electron irradiation effect on antimony doping of silicon 〈111〉 grown by molecular-beam epitaxy
- 15 February 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (4) , 1404-1409
- https://doi.org/10.1063/1.338119
Abstract
The effect of electron irradiation on the antimony doping levels in silicon molecular-beam epitaxy has been studied. For substrate temperatures in the 620–800 °C range, electron irradiation enhances the doping efficiency significantly. Sharp, well-defined profiles, high doping levels (up to 3×1019 cm−3) and high-quality epitaxial layers are obtained. Using a semiempirical model, a chart of the doping levels as a function of both the substrate temperature and antimony flux is developed. The influence of electron irradiation on the antimony adlayer is also discussed.This publication has 16 references indexed in Scilit:
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