Characterization of microstructural defects in BF+2 -implanted silicon
- 15 October 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (8) , 3032-3038
- https://doi.org/10.1063/1.335852
Abstract
A systematic study on the nature and evolution of the postannealing defects in BF+2 ‐implanted silicon with implantation doses ranging from 5×1014 to 1×1016 cm−2 is reported. The type, nature, size, distribution, and density of the defects were determined by transmission electron microscopy. Formation mechanisms of the microstructural defects are discussed.This publication has 21 references indexed in Scilit:
- Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted siliconApplied Physics Letters, 1984
- Junction leakage studies in rapid thermal annealed diodesApplied Physics Letters, 1984
- Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized siliconApplied Physics Letters, 1984
- The recrystalization of BF2+-implanted silicon by light-flash annealingSolid-State Electronics, 1982
- Rapid isothermal annealing of ion implantation damage using a thermal radiation sourceApplied Physics Letters, 1981
- Factors influencing the formation and growth of faulted loops in BF+2 -implanted siliconJournal of Applied Physics, 1981
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted siliconJournal of Applied Physics, 1979
- A three-stage model for the development of secondary defects in ion-implanted siliconRadiation Effects, 1978
- Damage Effects in Boron and BF 2 Ion‐Implanted p+‐n Junctions in SiliconJournal of the Electrochemical Society, 1977
- Industrial Ion Implantation MachinesIEEE Transactions on Manufacturing Technology, 1975