Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of low-energy (100 eV–10 keV) boron ion implantationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Time scales of transient enhanced diffusion: free and clustered interstitialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Implant damage and transient enhanced diffusion in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Mechanisms of implant damage annealing and transient enhanced diffusion in SiApplied Physics Letters, 1994
- The effect of fluorine on the redistribution of boron in ion-implanted siliconJournal of Applied Physics, 1993
- Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profilesJournal of Applied Physics, 1990
- Damage removal/dopant diffusion tradeoffs in ultra-shallow implanted p/sup +/-n junctionsIEEE Transactions on Electron Devices, 1990
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987