The effect of fluorine on the redistribution of boron in ion-implanted silicon

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Abstract
The distributions of B atoms in samples previously implanted with F+ and Ne+ with doses of 1.2×1013 cm−2 and 1.5×1015 cm−2 before and after annealing were investigated by secondary ion mass spectrometry. After annealing at 900 °C, a strong dependence of B redistribution rate on F concentration was shown. The presence of F decreased B redistribution, while that of Ne (close to F in the periodic table, but inert) did not. When postimplantation annealing was carried out at 1000 °C, the B distribution did not depend on the type of the previously implanted ions. At this temperature F atoms exit the crystal. The experiment showed that the redistribution of B implanted in Si depended on the chemical activity of the impurity present in a crystal and on its concentration.