Chemical Bonding Features of Fluorine and Boron in BF2 +-Ion-Implanted Si
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2349-2352
- https://doi.org/10.1143/jjap.29.l2349
Abstract
The chemical bonding configurations of fluorine and boron atoms in a BF2 +-ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900°C, the BF bonds are thermally decomposed to form four fold-coordinated acceptors as well as thermodynamically stable SiF x bonds (x=2, 3) in the matrix.Keywords
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