Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2213
- https://doi.org/10.1143/jjap.27.l2213
Abstract
In this study, a clean silicon surface is oxidized in a UHV chamber and the surface suboxide compositions are analyzed using in situ X-ray photoelectron spectroscopy. It is found that the predominant suboxides are Si2O3 and SiO irrespective of crystallographic orientations in the early stages of oxidation. This is interpreted in terms of a significant number of atomic steps existing on the clean Si surface. The observed chemical shift of O(1s) core level signal is explained by the partial charge transfer from the first and second nearest-neighbor silicon atoms to oxygen.Keywords
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