Effects of annealing on the damage morphologies in BF+2 ion implanted (1 0 0) silicon
- 1 May 1991
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 26 (10) , 2603-2607
- https://doi.org/10.1007/bf02387725
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formationJournal of Electronic Materials, 1989
- Optimization of BF2+ implanted and rapidly annealed junctions in siliconJournal of Applied Physics, 1986
- Furnace and Rapid Thermal Annealing of P+/n Junctions in BF 2 + ‐ Implanted SiliconJournal of the Electrochemical Society, 1985
- Shallow boron-doped junctions in siliconJournal of Applied Physics, 1985
- Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized siliconApplied Physics Letters, 1984
- Silicon-gate n-well CMOS process by full ion-implantation technologyIEEE Transactions on Electron Devices, 1980