Highly strained InGaAs QW VCSEL with lasing wavelengthat 1.22 µm
- 1 February 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (3) , 177-178
- https://doi.org/10.1049/el:20010126
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodesIEEE Photonics Technology Letters, 1998