Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradation and Variation
- 1 January 2003
- journal article
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 16 (3) , 387-393
- https://doi.org/10.2494/photopolymer.16.387
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Analysis of Line Edge Roughness Using Probability Process Model for Chemically Amplified ResistsJapanese Journal of Applied Physics, 2003
- Line-Edge Roughness: Characterization and Material OriginJapanese Journal of Applied Physics, 2003
- Gate line-edge roughness effects in 50-nm bulk MOSFET devicesPublished by SPIE-Intl Soc Optical Eng ,2002
- Amplitude and spatial frequency characterization of line-edge roughness using CD-SEMPublished by SPIE-Intl Soc Optical Eng ,2002
- An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scalingIEEE Electron Device Letters, 2001