Metal organic chemical vapor deposition (MOCVD) perspectives and prospects
- 1 January 1989
- journal article
- review article
- Published by Wiley in Advanced Materials
- Vol. 1 (8-9) , 282-292
- https://doi.org/10.1002/adma.19890010807
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Graphical Abstract (Angew. Chem. Int. Ed. Engl. 8/1989)Angewandte Chemie International Edition in English, 1989
- Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguidesJournal of Crystal Growth, 1988
- Organometallic chemical vapor deposition of III/V compound semiconductors with novel organometallic precursorsJournal of the American Chemical Society, 1988
- Tc of c-Axis-Oriented Y-Ba-Cu-O Films Prepared by CVDJapanese Journal of Applied Physics, 1988
- A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVDIEEE Journal of Quantum Electronics, 1987
- Fundamentals of Low Dimensional PhysicsSpringer Proceedings in Physics, 1986
- (InAs)1(GaAs)1 Layered Crystal Grown on (100)InP by MOCVDJapanese Journal of Applied Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Submicrometer patterning by projected excimer-laser-beam induced chemistryJournal of Vacuum Science & Technology B, 1985
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969