Ultrasonic Investigation of the Acceptor Ground State of Si(B) II. The Distribution of Splittings
- 1 June 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 111 (2) , 555-564
- https://doi.org/10.1002/pssb.2221110218
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Ultrasonic spectroscopy in p-type siliconJournal de Physique Lettres, 1979
- ESR from boron in silicon at zero and small external stress. II. Linewidth and crystal defectsPhysica Status Solidi (b), 1978
- ESR From boron in silicon at zero and small external stress I. Line positions and line structurePhysica Status Solidi (b), 1978
- Ultrasonic attenuation due to the neutral acceptor Mn in GaAsSolid State Communications, 1976
- The lattice contraction coefficient of boron and phosphorus in siliconSolid-State Electronics, 1972
- Shapes of Inhomogeneously Broadened Resonance Lines in SolidsReviews of Modern Physics, 1969
- Strain broadening of the N1 zero-phonon line in sodium chlorideJournal of Physics and Chemistry of Solids, 1968
- Paramagnetic relaxation of shallow acceptor states in semiconductorsJournal of Physics and Chemistry of Solids, 1965
- Spin and combined resonance on acceptor centres in Ge and Si type crystals—IJournal of Physics and Chemistry of Solids, 1963
- The Continuum Theory of Lattice DefectsPublished by Elsevier ,1956