Sidegating effect of GaN MESFETs grown on sapphiresubstrate
- 19 March 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (6) , 598-600
- https://doi.org/10.1049/el:19980423
Abstract
A GaN metal semiconductor field effect transistor (MESFET) with 2 µm gate-length and 200 µm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585 cm2/V·s with a carrier concentration of 1.1 × 1017 cm–3 at 300 K, and 1217 cm2/V·s with 2.4 × 1016 cm–3 at 77 K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288 mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.Keywords
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