Mathematical model of internal temperature profile of GaAs during rapid thermal annealing
- 15 June 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (12) , 8037-8041
- https://doi.org/10.1063/1.347449
Abstract
In previous studies it was reported that GaAs samples which were rapid thermal annealed exhibit bright bands adjacent to the surfaces in cathodoluminescence images of the cross sections. It is possible that the presence and depth of these bright bands are related to thermal stresses in the GaAs resulting from thermal gradients during heating and cooling. To investigate this possibility, a one-dimensional mathematical model was developed to predict the temperatures through the thickness of the GaAs. Calculations of the thermal stress field show that the thermal stresses do not correlate with the depth of the bright bands.This publication has 7 references indexed in Scilit:
- Enhancement of luminescence in GaAs by low levels of CuApplied Physics Letters, 1991
- Examination of rapid thermal annealed GaAs using cathodoluminescenceApplied Physics Letters, 1989
- Thermal and stress analysis of semiconductor wafers in a rapid thermal processing ovenIEEE Transactions on Semiconductor Manufacturing, 1988
- Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effectsJournal of Applied Physics, 1984
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- Determination of the total emittance of n-type GaAs with application to Czochralski growthJournal of Applied Physics, 1980