Microwave hot electron effects in semiconductor quantized inversion layers
- 30 April 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (4) , 355-359
- https://doi.org/10.1016/0038-1101(77)90121-6
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Surfons and the Electron Mobility in Silicon Inversion LayersJapanese Journal of Applied Physics, 1974
- Effect of charge inhomogeneities on silicon surface mobilityJournal of Applied Physics, 1973
- The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interfaceSurface Science, 1972
- Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon SurfacesPhysical Review B, 1971
- Surfons and the electron mobility in a semiconductor inversion layerSurface Science, 1971
- Electron mobility in a semiconductor inversion layer: Possible contribution from bulk phononsSurface Science, 1971
- Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity ScatteringPhysical Review B, 1970
- Ionised impurity scattering in silicon surface channelsSolid-State Electronics, 1970
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967