Optical and electrical properties of InN thin films grown on ZnO/α-Al2O3 by RF reactive magnetron sputtering
- 1 December 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 334 (1-2) , 49-53
- https://doi.org/10.1016/s0040-6090(98)01115-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- MBE growth and properties of ZnO on sapphire and SiC substratesJournal of Electronic Materials, 1996
- Relaxation of excited species in He/N2pulsed RF discharges: kinetics of metastable speciesPlasma Sources Science and Technology, 1995
- Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknessesJournal of Applied Physics, 1993
- The growth of thick GaN film on sapphire substrate by using ZnO buffer layerJournal of Crystal Growth, 1993
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Optical band gap of indium nitrideJournal of Applied Physics, 1986
- Electron mobility in indium nitrideElectronics Letters, 1984