Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6R) , 1695-1701
- https://doi.org/10.1143/jjap.31.1695
Abstract
Growth characteristics and device application of the selective surface doping method in lateral solid phase epitaxy (L-SPE) are presented. In this method, P atoms are incorporated near the surface of amorphous Si (a-Si) films to enhance the L-SPE growth and the underlying undoped layers are used for device fabrication. First, the growth characteristics are investigated by changing thicknesses of the a-Si film and the P-doped layer, and a quantitative model to explain the experimental results is presented. Then, it is shown that redistribution of the P atoms during L-SPE annealing is negligibly small, and the P-doped layer is selectively etched by combination of a wet chemical etchant and subsequent reactive ion etching. Finally, metal-oxide-semiconductor field-effect transistors (MOSFETs) with upper and lower gate electrodes are fabricated in the undoped layer and the electrical properties of both the upper and lower channel FETs are investigated.Keywords
This publication has 13 references indexed in Scilit:
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon FilmsJapanese Journal of Applied Physics, 1990
- Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atomsApplied Physics Letters, 1988
- Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxyJournal of Applied Physics, 1988
- Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxyApplied Physics Letters, 1988
- Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxyApplied Physics Letters, 1988
- Lateral solid phase epitaxy in selectively P-doped amorphous Si filmsApplied Physics Letters, 1986
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si FilmsJapanese Journal of Applied Physics, 1986
- Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substratesApplied Physics Letters, 1986
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 PatternsJapanese Journal of Applied Physics, 1985
- Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantationApplied Physics Letters, 1985